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Growth and Characterization of Ternary Chalcogenide Thin Films for Efficient Solar Cells and Possible Industrial Applications

Growth and Characterization of Ternary Chalcogenide Thin Films for Efficient Solar Cells and Possible Industrial Applications

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DEDICATION

This research material, titled “Growth and Characterization of Ternary Chalcogenide Thin Films for Efficient Solar Cells and Possible Industrial Applications” is dedicated to God for His boundless grace and guidance. It is also a tribute to all computer enthusiasts whose contributions made my research journey smoother and enriched my documentation process, making the experience truly fulfilling.



ACKNOWLEDGEMENT

I am profoundly grateful to everyone who contributed to the successful completion of this project. I am especially grateful to my Supervisor (Name), the Head of Department (Name), and the Lecturers in the Department of Physics for their invaluable guidance and support. I also acknowledge the contributions of authors and scholars whose works on Growth and Characterization of Ternary Chalcogenide Thin Films for Efficient Solar Cells and Possible Industrial Applications provided essential insights. Special thanks go to my study area (and any funding organizations, if applicable) for their financial assistance. I am equally thankful to stakeholders, including mentors, teachers, and colleagues, for their encouragement and support. Finally, I deeply appreciate my family and friends for their patience and unwavering support throughout this journey. Your contributions have been instrumental in making this research a reality.



TABLE OF CONTENTS

PRELIMINARY PAGES

CHAPTER ONE

  • 1.1.0 Introduction 1
  • 1.2.0 Benefits of Thin Films 2
  • 1.3.0 Aim and Objectives of the Study 3-4

CHAPTER TWO

  • 2.1.0 Optical and Solid State Properties of Thin Film - 5
  • 2.1.1 Transmittance 5-6
  • 2.1.2 Absorbance 6
  • 2.1.3 Reflectance 7
  • 2.1.4 Absorption Coefficient 7-8
  • 2.1.5 Optical Density 8-9
  • 2.2.0 Band gap and Absorption Edge 9-12
  • 2.2.1 Absorption Edge 12-13
  • 2.2.2 Optical Constants 13-14
  • 2.2.3 Dielectric Constant 14-15
  • 2.2.4 Optical Conductivity 15
  • 2.2.5 Extinction Coefficient Factor 15
  • 2.3.0 Dispersion 15-16
  • 2.4.0 Photoconductivity 16-17
  • 2.5.0 Luminescence 17-18
  • 2.6.0 Electrical Conductivity 18
  • 2.7.0 Thermal Conductivity 18-19
  • 2.8.0 Spectral Selective Surfaces Aspect of Solar Energy Application 19
  • 2.8.1 Spectral Selectivity 19-20
  • 2.8.2 Solar Spectral Selective Absorber Surfaces 20-21
  • 2.8.3 Semiconductor-Metal tandems 21
  • 2.8.4 Heat Mirrors 21-22
  • 2.8.5 Dark Mirrors 22
  • 2.8.6 Antireflection Coatings 22-23
  • 2.8.7 Spectral Splitting and Cold Mirror Coatings 23
  • 2.8.8 Radiative Cooling Materials 23
  • 2.8.9 Window Coatings 23-24
  • 2.9.0 Solar Control Coatings 24
  • 2.9.1 Low Thermal Transmittance 24
  • 2.9.2 Materials for Solar Control and Low Thermal Transmittance 24-25
  • 2.9.3 Window Coatings with Dynamic Properties 25-26

CHAPTER THREE

  • 3.0 Methods for Thin Film Growth 27
  • 3.1.1 Thermal Evaporation 27-29
  • 3.1.2 Epitaxial Growth 29-30
  • 3.1.2.1 Molecular Beam Epitaxial (MBE) 30-32
  • 3.1.2.2 Liquid Phase Epitaxy 32
  • 3.1.3 Sputtering 32-34
  • 3.1.4 Chemical Vapour Deposition (CVD) 34-36
  • 3.1.5 Spray Pyrolysis 37
  • 3.1.6 Plasma Technique 37-38
  • 3.1.7 Sol-gel Thin Film Formation 38
  • 3.1.8 Precursor Sol 38-39
  • 3.1.8.1 Sol-gel Dip Coating 39
  • 3.1.8.2 Spin Coating 39-40
  • 3.1.8.3 Spin Deposition of Halide and Chalcogenide Films 40-41
  • 3.1.9 The Solution Growth Technique 41-44
  • 3.1.9.1 Thin Film Condensation Formation Mechanism 44-45
  • 3.1.9.2 Doping by Chemical Bath Deposition 45

CHAPTER FOUR

  • The Measurement Techniques of Thin Film Characteristics and Materials 46
  • 4.1.0 Measurement Techniques of Thin Film Characteristics 46
  • 4.1.1 Film Thickness 46
  • 4.1.1.1 Micro balance (gravimetric) Technique 47
  • 4.1.1.2 Optical Technique 47-48
  • 4.1.2 Absorbance/Transmittance Measurement 48
  • 4.1.3 Method of Determining the Composition of Thin Films 48-49
  • 4.1.3.1 Atomic Absorption Spectroscopic (AAS) Method 49
  • 4.1.3.2 X-ray Fluorescence 49-50
  • 4.1.3.3 Infrared Spectroscopy 50-51
  • 4.1.3.4 Qualitative and Quantitative Chemical Analysis (QCA) 52
  • 4.2.0 Structural Characterization 52-53
  • 4.2.1 Crystallographic Structure and Topography 53-54
  • 4.2.1 Transmission Electron Microscopy (TEM) 53-54
  • 4.2.2 Surface Structure 54
  • 4.2.2.1 LEED Technique 54
  • 4.2.2.2 RHEED Technique 54-55
  • 4.2.2.3 Photo Electron Spectroscopy (PES) 55
  • 4.2.2.4 Optical Microscopy 55-56
  • 4.3.0 Methodology 57-58
  • 4.3.1 Iron Copper Sulphide 58-60
  • 4.3.2 Optical and Solid State Characterization 60
  • 4.3.3 Film Thickness Measurement 60-61
  • 4.4. Morphological Analysis 61

CHAPTER FIVE

  • 5.0 Results and Observations 62
  • 5.1 Optical Properties of Iron Copper Sulphide (FeCuS) 62
  • 5.1.1 Absorbance (A) 62
  • 5.1.2 Transmittance (T) 62
  • 5.1.3 Reflectance (R) 62-63
  • 5.1.4 Absorption Coefficient ( α) 63
  • 5.1.5 Refractive Index (n) 63
  • 5.1.6 Optical Conductivity (ÏÆ'o) 64
  • 5.1.7 Extinction Coefficient ( k) 64
  • 5.2 Solid State Properties 64
  • 5.2.1 Band gap Energy (Eg) 64-65
  • 5.2.2 Dielectric Constant (real part) (ε r) 65
  • 5.2.3 Dielectric Constant ( imaginary part) (ε i) 65
  • 5.3 Optical Properties of Iron Zinc Sulphide (FeZnS) 65
  • 5.3.1 Absorbance (A) 65
  • 5.3.2 Transmittance (T) 66
  • 5.3.3 Reflectance (R) 66
  • 5.3.4 Absorption Coefficient (α) 66
  • 5.3.5 Refractive Index (n) 66-67
  • 5.3.6 Optical Conductivity (ÏÆ'o) 67
  • 5.3.7 Extinction Coefficient ( k) 67
  • 5.4 Solid State Properties 67
  • 5.4.1 Band gap Energy (Eg) 67
  • 5.4.2 Dielectric Constant (real) (ε r) 68
  • 5.4.3 Dielectric Constant (imaginary part) (ε i) 68
  • 5.5 Optical Properties of Lead Silver Sulphide ( PbAgS) 68
  • 5.5.1 Absorbance (A) 68
  • 5.5.2 Transmittance ( T) 69
  • 5.5.3 Reflectance ( R) 69
  • 5.5.4 Absorption Coefficient (α) 69
  • 5.5.5 Refractive Index ( n) 69-70
  • 5.5.6 Optical Conductivity (ÏÆ'o) 70
  • 5.5.7 Extinction Coefficient ( k) 70
  • 5.6 Solid State Properties 71
  • 5.6.1 Band gap Energy ( Eg) 71
  • 5.6.2 Dielectric Constant (real part) (ε r) 71
  • 5.6.3 Dielectric Constant ( imaginary part) (ε i) 71-72
  • 5.7 Optical Properties of Copper Silver Sulphide (CuAgS) 72
  • 5.7.1 Absorbance (A) 72
  • 5.7.2 Transmittance ( T) 72
  • 5.7.3 Reflectance ( R) 72
  • 5.7.4 Absorption Coefficient (α) 73
  • 5.7.5 Refractive Index (n) 73
  • 5.7.6 Optical Conductivity (ÏÆ'o) 73
  • 5.7.7 Extinction Coefficient ( k) 73
  • 5.8 Solid State Properties 73
  • 5.8.1 Band gap Enegry ( Eg) 73-74
  • 5.8.2 Dielectric Constant (real part) (ε r) 74
  • 5.8.3 Dielectric Constant (imaginary part) (ε i) 74
  • 5.9 Optical Properties of Copper Zinc Sulphide (CuZnS) 74
  • 5.9.1 Absorbance ( A) 74
  • 5.9.2 Transmittance ( T) 75
  • 5.9.3 Reflectance ( R) 75
  • 5.9.4 Absorption Coefficient (α) 75-76
  • 5.9.5 Refractive Index ( n) 76
  • 5.9.6 Optical Conductivity (ÏÆ'o) 76
  • 5.9.7 Extinction Coefficient ( k) 77
  • 5.10 Solid State Properties 77
  • 5.10.1 Band gap Energy (Eg) 77-78
  • 5.10.2 Dielectric Constant (real part) (ε r) 78
  • 5.10.3 Dielectric Constant ( imaginary part) (ε i) 78

CHAPTER SIX

  • 6.0 Analysis and Discussion 80
  • 6.1 The Spectral Analysis 80
  • 6.2 Other Optical Properties 80
  • 6.3 Solid State Properties 80-81

CHAPTER SEVEN

  • Conclusion and Recommendations 82
  • 7.0 Conclusion 82-84
  • 7.1 Recommendation 85

REFERENCES

86-99

APPENDIX A. Figures 100-154

APPENDIX B Plates 155-157

APPENDIX C Slides 158-159

APPENDIX D Set Ups 160-161


ABSTRACT

Ternary thin films of Iron Copper Sulphide (FeCuS), Iron Zinc Sulphide (FeZnS), Lead Silver Sulphide (PbAgS), Copper Silver Sulphide (CuAgS) and Copper Zinc Sulphide (CuZnS) were grown using cheap and simple solution growth technique with EDTA, TEA and NH3 as complexing agents. The deposited films were characterized using PYE-UNICO-UV-2102 PC spectrophotometer, and optical microscopy. The results suggest that some of the films have crystal structures. From the spectral analysis of absorbance/transmittance, the optical and solid state properties were deduced. The other optical properties so obtained include the reflectance, absorption coefficient, refractive index, extinction coefficient, optical conductivity and thickness, while the solid state properties are dielectric constant and band gap energy.

For all the five categories of thin films grown (i.e. FeCuS, FeZnS, PbAgS, CuAgS and CuZnS), absorbance was high in UV and low in VIS-NIR-regions, while the transmittance were low in UV-region and high in VIS-NIR-regions. The reflectances were high in UV-region and low in the VIS-NIR-regions. For FeCuS, FeZnS, PbAgS, CuAgS and CuZnS, the absorption coefficient ranged from 0.1×106 m-1 to 1.65×106 m-1, 0.2×106 m-1 to 2.3×106 m-1, 0.5×106 m-1 to 0.9×106 m-1, 0.5×106 m-1 to 1.28×106 m-1 and 0.24×106 m-1 to 1.6×106 m-1, respectively. The real part of the refractive index ranged from 1.2 to 2.3, 0.72 to 2.3, 0.1 to 2.3, 1.94 to 2.28 and 1.6 to 2.3, respectively.

The corresponding values of optical conductivity ranged from 0.03×1014 s-1 to 0.6×1014 s-1, 0.07×1014 s-1, 0.06×1014 s-1 to 0.6×1014 s-1, 0.24×1014 s-1 to 0.6×1014 s-1 and 0.12×1014 s-1 to 0.6×1014 s-1, respectively. The extinction coefficient, ranged from 0.005 to 0.038, 0.004 to 0.056, 0.010 to 0.140, 0.025 to 0.064 and 0.008 to 0.082, respectively. The direct band gap ranged from 2.4eV to2.8eV for FeCuS, 2.9eV for FeZnS, 1.5eV to 2.1eV for PbAgS, 2.3eV for CuAgS and 2.2eV to 2.4eV for CuZnS. The values of the indirect band gap were in the range 0.6eV to 1.0eV for FeCuS, 1.9eV for FeZnS, 0.3eV to 0.8eV for PbAgS, 1.1eV for CuAgS and 0.4eV to 0.9eV for CuZnS.

The real part of the dielectric constant ranged from 1.4 to 5.2, 0.7 to 5.2, 0.4 to 5.2, 3.8 to 5.2 and 2.2 to 5.2, respectively, while the corresponding imaginary part of the dielectric constant ranged from 0.008 to 0.136, 0.008 to 0.164, 0.010 to 0.390, 0.100 to 0.290 and 0.030 to 0.360, respectively. The range of band gaps, 1.5eV to 2.9eV makes the films suitable for solar cells fabrication; this is in agreement with the finding for the film FeCdS.


Growth and Characterization of Ternary Chalcogenide Thin Films for Efficient Solar Cells and Possible Industrial Applications

CHAPTER ONE

1.1 Introduction

… As a prelude to other parts of this study, this chapter will discuss the background upon which this study was initiated, the statement of problems that led to this study, the Aim and Objectives of the study. Others are Significance of the study, Scope of work, Research hypothesis and questions, Limitation of the study and Definition of technical terms.…

CHAPTER TWO

2.0 Literature Review

2.1 Introduction

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